The description of the nature of carrier in the semiconductor and of the physics of the related devices, in particular, the simple description of a perovskite-based diode, is not available. This implies a lack of predictive design of the device, pivotal in the development of a reliable technology. There is no direct experimental method that measures the band diagram, and carrier and electric field distributions and evolution in a completed diode.
In our laboratories we will develop state of the art devices with optimized architectures. Our characterization techniques also include stability test on the devices to perform a screening on intrinsic and extrinsic degradation mechanisms under device stress.